Product Center
| Part number： | XP10NA011J |
|---|---|
| Product classification： | Single FETs, MOSFETs |
| Manufacturer： | YAGEO XSEMI |
| description： | MOSFET N-CH 100 |
| Encapsulation： | - |
| Packing： | Tube |
| Quantity： | 1000 |
| RoHS： | 1 |
Quantity
Price
Total price
1
$3.6840
$3.6840
80
$2.5080
$200.6400
560
$2.2320
$1,249.9200
1040
$1.9080
$1,984.3200
2000
$1.8000
$3,600.0000
5040
$1.7280
$8,709.1200
| TYPE | DESCRIPTION |
| Mfr | YAGEO XSEMI |
| Series | XS10NA011 |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 30A, 10V |
| Power Dissipation (Max) | 1.13W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251S |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2288 pF @ 80 V |
