Part number: | TP90H050WS |
---|---|
Product classification: | Single FETs, MOSFETs |
Manufacturer: | Transphorm |
description: | GANFET N-CH 900 |
Encapsulation: | - |
Packing: | Tube |
Quantity: | 107 |
RoHS: | |
Quantity
Price
Total price
1
$20.7480
$20.7480
30
$16.7880
$503.6400
TYPE | DESCRIPTION |
Mfr | Transphorm |
Series | - |
Package | Tube |
Product Status | OBSOLETE |
Package / Case | TO-247-3 |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C |
Technology | GaNFET (Cascode Gallium Nitride FET) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
Rds On (Max) @ Id, Vgs | 63mOhm @ 22A, 10V |
Power Dissipation (Max) | 119W (Tc) |
Vgs(th) (Max) @ Id | 4.4V @ 700µA |
Supplier Device Package | TO-247-3 |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 900 V |
Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 600 V |