Product Center
| Part number： | TP44100SG |
|---|---|
| Product classification： | Single FETs, MOSFETs |
| Manufacturer： | Tagore Technology |
| description： | GAN FET HEMT 65 |
| Encapsulation： | - |
| Packing： | Tape & Reel (TR) |
| Quantity： | 2969 |
| RoHS： | |
Quantity
Price
Total price
1
$6.6000
$6.6000
10
$5.7000
$57.0000
100
$4.9560
$495.6000
500
$3.9600
$1,980.0000
3000
$3.9600
$11,880.0000
| TYPE | DESCRIPTION |
| Mfr | Tagore Technology |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 22-PowerVFQFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 118mOhm @ 500mA, 6V |
| Vgs(th) (Max) @ Id | 2.5V @ 11mA |
| Supplier Device Package | 22-QFN (5x7) |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 6V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 400 V |
