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SIHK105N60E-T1-GE3
  • image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
  • image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
  • image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
  • image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
Part number SIHK105N60E-T1-GE3
Product classification Single FETs, MOSFETs
Manufacturer Vishay / Siliconix
description E SERIES POWER
Encapsulation -
Packing Tape & Reel (TR)
Quantity 2050
RoHS 1
Inventory: 2050
Total number

Quantity

Price

Total price

1

$6.5640

$6.5640

10

$5.5080

$55.0800

100

$4.4640

$446.4000

500

$3.9600

$1,980.0000

1000

$3.3960

$3,396.0000

2000

$3.1920

$6,384.0000

Obtain quotation information
image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
Part number
SIHK105N60E-T1-GE3
Product classification
Single FETs, MOSFETs
Manufacturer
Vishay / Siliconix
E SERIES POWER
-
Tape & Reel (TR)
2050
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrVishay / Siliconix
SeriesEF
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerBSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs105mOhm @ 10A, 10V
Power Dissipation (Max)142W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackagePowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2301 pF @ 100 V
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