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| Part number： | SIHB6N80AE-GE3 |
|---|---|
| Product classification： | Single FETs, MOSFETs |
| Manufacturer： | Vishay / Siliconix |
| description： | E SERIES POWER |
| Encapsulation： | - |
| Packing： | Tube |
| Quantity： | 1040 |
| RoHS： | 1 |
Quantity
Price
Total price
1
$2.3880
$2.3880
50
$1.9200
$96.0000
100
$1.5840
$158.4000
500
$1.3320
$666.0000
1000
$1.1400
$1,140.0000
2000
$1.0800
$2,160.0000
5000
$1.0320
$5,160.0000
10000
$1.0080
$10,080.0000
| TYPE | DESCRIPTION |
| Mfr | Vishay / Siliconix |
| Series | E |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2A, 10V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 422 pF @ 100 V |
