Product Center

RN4990(TE85L,F)
  • image of Bipolar Transistor Arrays, Pre-Biased>RN4990(TE85L,F)
  • image of Bipolar Transistor Arrays, Pre-Biased>RN4990(TE85L,F)
Part number RN4990(TE85L,F)
Product classification Bipolar Transistor Arrays, Pre-Biased
Manufacturer Toshiba Electronic Devices and Storage Corporation
description NPN + PNP BRT Q
Encapsulation -
Packing Tape & Reel (TR)
Quantity 90
RoHS
Inventory: 90
Total number

Quantity

Price

Total price

1

$0.3960

$0.3960

10

$0.2760

$2.7600

100

$0.1440

$14.4000

500

$0.1080

$54.0000

1000

$0.0840

$84.0000

3000

$0.0720

$216.0000

6000

$0.0720

$432.0000

9000

$0.0600

$540.0000

30000

$0.0600

$1,800.0000

75000

$0.0480

$3,600.0000

150000

$0.0480

$7,200.0000

Obtain quotation information
image of Bipolar Transistor Arrays, Pre-Biased>RN4990(TE85L,F)
image of Bipolar Transistor Arrays, Pre-Biased>RN4990(TE85L,F)
Part number
RN4990(TE85L,F)
Product classification
Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
NPN + PNP BRT Q
-
Tape & Reel (TR)
90
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Frequency - Transition250MHz, 200MHz
Resistor - Base (R1)4.7kOhms
Supplier Device PackageUS6
captcha

Service hours: Monday to Saturday 9:00-18:00
Please select online customer service:
86-13826519287‬

Service hours: Monday to Saturday 9:00-18:00
Please select online customer service:

Service hours: Monday to Saturday 9:00-18:00
Please select online customer service:
点击这里给我发消息
0