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RN2901,LF(CT
  • image of Bipolar Transistor Arrays, Pre-Biased>RN2901,LF(CT
  • image of Bipolar Transistor Arrays, Pre-Biased>RN2901,LF(CT
Part number RN2901,LF(CT
Product classification Bipolar Transistor Arrays, Pre-Biased
Manufacturer Toshiba Electronic Devices and Storage Corporation
description PNPX2 BRT Q1BSR
Encapsulation -
Packing Tape & Reel (TR)
Quantity 6
RoHS 1
Inventory: 6
Total number

Quantity

Price

Total price

1

$0.3120

$0.3120

10

$0.2160

$2.1600

100

$0.1080

$10.8000

500

$0.0840

$42.0000

1000

$0.0600

$60.0000

3000

$0.0480

$144.0000

6000

$0.0480

$288.0000

9000

$0.0360

$324.0000

30000

$0.0360

$1,080.0000

75000

$0.0360

$2,700.0000

150000

$0.0360

$5,400.0000

Obtain quotation information
image of Bipolar Transistor Arrays, Pre-Biased>RN2901,LF(CT
image of Bipolar Transistor Arrays, Pre-Biased>RN2901,LF(CT
Part number
RN2901,LF(CT
Product classification
Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
PNPX2 BRT Q1BSR
-
Tape & Reel (TR)
6
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Frequency - Transition200MHz
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)4.7kOhms
Supplier Device PackageUS6
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