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NESG2107M33-A
  • image of Bipolar RF Transistors>NESG2107M33-A
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Part number NESG2107M33-A
Product classification Bipolar RF Transistors
Manufacturer CEL (California Eastern Laboratories)
description RF TRANS NPN 5V
Encapsulation -
Packing Bulk
Quantity 0
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image of Bipolar RF Transistors>NESG2107M33-A
image of Bipolar RF Transistors>NESG2107M33-A
Part number
NESG2107M33-A
Product classification
Bipolar RF Transistors
Manufacturer
CEL (California Eastern Laboratories)
RF TRANS NPN 5V
-
Bulk
0
Product parameters
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TYPEDESCRIPTION
MfrCEL (California Eastern Laboratories)
Series-
PackageBulk
Product StatusOBSOLETE
Package / Case3-SMD, Flat Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain7dB ~ 10dB
Power - Max130mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)5V
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 5mA, 1V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.5dB @ 2GHz
Supplier Device Package3-SuperMiniMold (M33)
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