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MS1006
  • image of Bipolar RF Transistors>MS1006
  • image of Bipolar RF Transistors>MS1006
Part number MS1006
Product classification Bipolar RF Transistors
Manufacturer Microsemi Corporation
description RF TRANS NPN 55
Encapsulation -
Packing Bulk
Quantity 0
RoHS
image of Bipolar RF Transistors>MS1006
image of Bipolar RF Transistors>MS1006
Part number
MS1006
Product classification
Bipolar RF Transistors
Manufacturer
Microsemi Corporation
RF TRANS NPN 55
-
Bulk
0
Product parameters
TYPEDESCRIPTION
MfrMicrosemi Corporation
Series-
PackageBulk
Product StatusOBSOLETE
Package / CaseM135
Mounting TypeStud Mount
Transistor TypeNPN
Operating Temperature200°C
Gain14dB
Power - Max127W
Current - Collector (Ic) (Max)3.25A
Voltage - Collector Emitter Breakdown (Max)55V
DC Current Gain (hFE) (Min) @ Ic, Vce19 @ 1.4A, 6V
Frequency - Transition30MHz
Supplier Device PackageM135
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