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IPTC026N12NM6ATMA1
  • image of Single FETs, MOSFETs>IPTC026N12NM6ATMA1
  • image of Single FETs, MOSFETs>IPTC026N12NM6ATMA1
Part number IPTC026N12NM6ATMA1
Product classification Single FETs, MOSFETs
Manufacturer IR (Infineon Technologies)
description TRENCH >=100V
Encapsulation -
Packing Tape & Reel (TR)
Quantity 0
RoHS 1
Inventory: 0
Total number

Quantity

Price

Total price

1

$7.2600

$7.2600

10

$6.5520

$65.5200

25

$6.2520

$156.3000

100

$5.4240

$542.4000

250

$5.1840

$1,296.0000

500

$4.7280

$2,364.0000

1800

$4.1160

$7,408.8000

Obtain quotation information
image of Single FETs, MOSFETs>IPTC026N12NM6ATMA1
image of Single FETs, MOSFETs>IPTC026N12NM6ATMA1
Part number
IPTC026N12NM6ATMA1
Product classification
Single FETs, MOSFETs
Manufacturer
IR (Infineon Technologies)
TRENCH >=100V
-
Tape & Reel (TR)
0
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrIR (Infineon Technologies)
SeriesOptiMOS™ 6
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case16-PowerSOP Module
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs2.6mOhm @ 115A, 10V
Power Dissipation (Max)3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id3.6V @ 169µA
Supplier Device PackagePG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)120 V
Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6500 pF @ 60 V
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