Product Center
| Part number： | IMBG65R015M2HXTMA1 |
|---|---|
| Product classification： | Single FETs, MOSFETs |
| Manufacturer： | IR (Infineon Technologies) |
| description： | SILICON CARBIDE |
| Encapsulation： | - |
| Packing： | Tape & Reel (TR) |
| Quantity： | 0 |
| RoHS： | 1 |
Quantity
Price
Total price
1
$25.6200
$25.6200
10
$23.6280
$236.2800
25
$22.5720
$564.3000
100
$20.1840
$2,018.4000
250
$19.2480
$4,812.0000
500
$18.3240
$9,162.0000
1000
$17.2560
$17,256.0000
| TYPE | DESCRIPTION |
| Mfr | IR (Infineon Technologies) |
| Series | CoolSiC™ Gen 2 |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 115A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 64.2A, 18V |
| Power Dissipation (Max) | 416W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 13mA |
| Supplier Device Package | PG-TO263-7-12 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Vgs (Max) | +23V, -7V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2792 pF @ 400 V |
