Part number: | ICE60N199 |
---|---|
Product classification: | Single FETs, MOSFETs |
Manufacturer: | IceMOS Technology |
description: | Superjunction M |
Encapsulation: | - |
Packing: | Tube |
Quantity: | 100 |
RoHS: | |
Quantity
Price
Total price
50
$3.0120
$150.6000
1000
$2.8200
$2,820.0000
5000
$2.5800
$12,900.0000
15000
$2.3760
$35,640.0000
25000
$2.2080
$55,200.0000
TYPE | DESCRIPTION |
Mfr | IceMOS Technology |
Series | - |
Package | Tube |
Product Status | ACTIVE |
Package / Case | TO-220-3 |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Rds On (Max) @ Id, Vgs | 199mOhm @ 10A, 10V |
Power Dissipation (Max) | 180W (Tc) |
Vgs(th) (Max) @ Id | 3.9V @ 250µA |
Supplier Device Package | TO-220 |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 600 V |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 25 V |