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ICE30N60W
  • image of Single FETs, MOSFETs>ICE30N60W
  • image of Single FETs, MOSFETs>ICE30N60W
Part number ICE30N60W
Product classification Single FETs, MOSFETs
Manufacturer IceMOS Technology
description Superjunction M
Encapsulation -
Packing Tube
Quantity 90
RoHS
Inventory: 90
Total number

Quantity

Price

Total price

30

$9.4080

$282.2400

150

$8.8200

$1,323.0000

600

$8.0640

$4,838.4000

2100

$7.4280

$15,598.8000

6000

$6.8880

$41,328.0000

Obtain quotation information
image of Single FETs, MOSFETs>ICE30N60W
image of Single FETs, MOSFETs>ICE30N60W
Part number
ICE30N60W
Product classification
Single FETs, MOSFETs
Manufacturer
IceMOS Technology
Superjunction M
-
Tube
90
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrIceMOS Technology
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs68mOhm @ 15A, 10V
Power Dissipation (Max)171W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageTO-247
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6090 pF @ 25 V
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