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ICE11N70
  • image of Single FETs, MOSFETs>ICE11N70
  • image of Single FETs, MOSFETs>ICE11N70
Part number ICE11N70
Product classification Single FETs, MOSFETs
Manufacturer IceMOS Technology
description Superjunction M
Encapsulation -
Packing Tube
Quantity 100
RoHS
Inventory: 100
Total number

Quantity

Price

Total price

50

$4.1040

$205.2000

1000

$3.8400

$3,840.0000

5000

$3.5160

$17,580.0000

15000

$3.2400

$48,600.0000

25000

$3.0000

$75,000.0000

Obtain quotation information
image of Single FETs, MOSFETs>ICE11N70
image of Single FETs, MOSFETs>ICE11N70
Part number
ICE11N70
Product classification
Single FETs, MOSFETs
Manufacturer
IceMOS Technology
Superjunction M
-
Tube
100
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrIceMOS Technology
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 5.5A, 10V
Power Dissipation (Max)108W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)700 V
Gate Charge (Qg) (Max) @ Vgs85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2750 pF @ 25 V
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