Product Center
| Part number： | G06N06S |
|---|---|
| Product classification： | Single FETs, MOSFETs |
| Manufacturer： | Goford Semiconductor |
| description： | N60V,RD(MAX)<22 |
| Encapsulation： | - |
| Packing： | Tape & Reel (TR) |
| Quantity： | 6142 |
| RoHS： | 1 |
Quantity
Price
Total price
1
$0.7080
$0.7080
10
$0.6120
$6.1200
100
$0.4200
$42.0000
500
$0.3480
$174.0000
1000
$0.3000
$300.0000
2000
$0.2640
$528.0000
4000
$0.2640
$1,056.0000
8000
$0.2520
$2,016.0000
12000
$0.2400
$2,880.0000
28000
$0.2280
$6,384.0000
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 6A, 10V |
| Power Dissipation (Max) | 2.1W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 30 V |
