Product Center
| Part number： | G01N20LE |
|---|---|
| Product classification： | Single FETs, MOSFETs |
| Manufacturer： | Goford Semiconductor |
| description： | N200V,RD(MAX)<8 |
| Encapsulation： | - |
| Packing： | Tape & Reel (TR) |
| Quantity： | 826 |
| RoHS： | 1 |
Quantity
Price
Total price
1
$0.4920
$0.4920
10
$0.3840
$3.8400
100
$0.2280
$22.8000
500
$0.2160
$108.0000
1000
$0.1440
$144.0000
3000
$0.1320
$396.0000
6000
$0.1320
$792.0000
9000
$0.1200
$1,080.0000
30000
$0.1080
$3,240.0000
75000
$0.1080
$8,100.0000
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 1A, 10V |
| Power Dissipation (Max) | 1.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 25 V |
