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FBG30N04CC
  • image of Single FETs, MOSFETs>FBG30N04CC
  • image of Single FETs, MOSFETs>FBG30N04CC
  • image of Single FETs, MOSFETs>FBG30N04CC
  • image of Single FETs, MOSFETs>FBG30N04CC
Part number FBG30N04CC
Product classification Single FETs, MOSFETs
Manufacturer EPC Space
description GAN FET HEMT 30
Encapsulation -
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Quantity 0
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$381.6600

$381.6600

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$357.4680

$3,574.6800

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image of Single FETs, MOSFETs>FBG30N04CC
image of Single FETs, MOSFETs>FBG30N04CC
image of Single FETs, MOSFETs>FBG30N04CC
Part number
FBG30N04CC
Product classification
Single FETs, MOSFETs
Manufacturer
EPC Space
GAN FET HEMT 30
-
Bulk
0
Product parameters
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TYPEDESCRIPTION
MfrEPC Space
Series-
PackageBulk
Product StatusACTIVE
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id2.8V @ 600µA
Supplier Device Package4-SMD
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)300 V
Gate Charge (Qg) (Max) @ Vgs2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 150 V
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