Part number: | FBG30N04CC |
---|---|
Product classification: | Single FETs, MOSFETs |
Manufacturer: | EPC Space |
description: | GAN FET HEMT 30 |
Encapsulation: | - |
Packing: | Bulk |
Quantity: | 0 |
RoHS: | |
Quantity
Price
Total price
1
$381.6600
$381.6600
10
$357.4680
$3,574.6800
TYPE | DESCRIPTION |
Mfr | EPC Space |
Series | - |
Package | Bulk |
Product Status | ACTIVE |
Package / Case | 4-SMD, No Lead |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Rds On (Max) @ Id, Vgs | 404mOhm @ 4A, 5V |
Vgs(th) (Max) @ Id | 2.8V @ 600µA |
Supplier Device Package | 4-SMD |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs (Max) | +6V, -4V |
Drain to Source Voltage (Vdss) | 300 V |
Gate Charge (Qg) (Max) @ Vgs | 2.6 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 150 V |