Product Center
| Part number： | FBG20N18BSH |
|---|---|
| Product classification： | Single FETs, MOSFETs |
| Manufacturer： | EPC Space |
| description： | GAN FET HEMT 20 |
| Encapsulation： | - |
| Packing： | Bulk |
| Quantity： | 51 |
| RoHS： | |
Quantity
Price
Total price
1
$471.3000
$471.3000
10
$453.5880
$4,535.8800
| TYPE | DESCRIPTION |
| Mfr | EPC Space |
| Series | e-GaN® |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 18A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Supplier Device Package | 4-SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
