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EPC7018GC
  • image of Single FETs, MOSFETs>EPC7018GC
  • image of Single FETs, MOSFETs>EPC7018GC
  • image of Single FETs, MOSFETs>EPC7018GC
  • image of Single FETs, MOSFETs>EPC7018GC
Part number EPC7018GC
Product classification Single FETs, MOSFETs
Manufacturer EPC Space
description GAN FET HEMT 10
Encapsulation -
Packing Bulk
Quantity 8
RoHS
Inventory: 8
Total number

Quantity

Price

Total price

1

$380.1600

$380.1600

10

$356.0640

$3,560.6400

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image of Single FETs, MOSFETs>EPC7018GC
image of Single FETs, MOSFETs>EPC7018GC
image of Single FETs, MOSFETs>EPC7018GC
Part number
EPC7018GC
Product classification
Single FETs, MOSFETs
Manufacturer
EPC Space
GAN FET HEMT 10
-
Bulk
8
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrEPC Space
SerieseGaN®
PackageBulk
Product StatusACTIVE
Package / Case5-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 40A, 5V
Vgs(th) (Max) @ Id2.5V @ 12mA
Supplier Device Package5-SMD
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1240 pF @ 50 V
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