Product Center
| Part number： | CGD65B200S2-T13 |
|---|---|
| Product classification： | Single FETs, MOSFETs |
| Manufacturer： | Cambridge GaN Devices |
| description： | 650V GAN HEMT, |
| Encapsulation： | - |
| Packing： | Tape & Reel (TR) |
| Quantity： | 4355 |
| RoHS： | 1 |
Quantity
Price
Total price
1
$5.4600
$5.4600
10
$4.5840
$45.8400
100
$3.7080
$370.8000
500
$3.3000
$1,650.0000
1000
$2.8200
$2,820.0000
2000
$2.6520
$5,304.0000
5000
$2.5560
$12,780.0000
| TYPE | DESCRIPTION |
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 2.75mA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V |
