Product Center
| Part number： | CGD65B130S2-T13 |
|---|---|
| Product classification： | Single FETs, MOSFETs |
| Manufacturer： | Cambridge GaN Devices |
| description： | 650V GAN HEMT, |
| Encapsulation： | - |
| Packing： | Tape & Reel (TR) |
| Quantity： | 4885 |
| RoHS： | 1 |
Quantity
Price
Total price
1
$7.7040
$7.7040
10
$6.4680
$64.6800
100
$5.2320
$523.2000
500
$4.6560
$2,328.0000
1000
$3.9840
$3,984.0000
2000
$3.7560
$7,512.0000
5000
$3.6000
$18,000.0000
| TYPE | DESCRIPTION |
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 12 V |
