Product Center
| Part number： | CGD65A130S2-T13 |
|---|---|
| Product classification： | Single FETs, MOSFETs |
| Manufacturer： | Cambridge GaN Devices |
| description： | 650V GAN HEMT, |
| Encapsulation： | - |
| Packing： | Tape & Reel (TR) |
| Quantity： | 3352 |
| RoHS： | 1 |
Quantity
Price
Total price
1
$7.5000
$7.5000
10
$6.4320
$64.3200
100
$5.3520
$535.2000
500
$4.7280
$2,364.0000
1000
$4.2600
$4,260.0000
3500
$3.9840
$13,944.0000
| TYPE | DESCRIPTION |
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 16-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
| Supplier Device Package | 16-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 12 V |
