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2SC2839E-SPA-AC
  • image of Bipolar RF Transistors>2SC2839E-SPA-AC
  • image of Bipolar RF Transistors>2SC2839E-SPA-AC
Part number 2SC2839E-SPA-AC
Product classification Bipolar RF Transistors
Manufacturer Sanyo Semiconductor/onsemi
description NPN EPITAXIAL P
Encapsulation -
Packing Bulk
Quantity 11700
RoHS
Inventory: 11700
Total number

Quantity

Price

Total price

6662

$0.0600

$399.7200

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image of Bipolar RF Transistors>2SC2839E-SPA-AC
image of Bipolar RF Transistors>2SC2839E-SPA-AC
Part number
2SC2839E-SPA-AC
Product classification
Bipolar RF Transistors
Manufacturer
Sanyo Semiconductor/onsemi
NPN EPITAXIAL P
-
Bulk
11700
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageBulk
Product StatusACTIVE
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypeNPN
Gain25dB
Power - Max150mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)20V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 1mA, 6V
Frequency - Transition320MHz
Noise Figure (dB Typ @ f)3dB @ 100MHz
Supplier Device Package3-SPA
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